{$cfg_webname}
主页 > 理工学 > 材料科学 >

突变结单晶硅太阳电池的初步研究

来源:wenku7.com  资料编号:WK76518 资料等级:★★★★★ %E8%B5%84%E6%96%99%E7%BC%96%E5%8F%B7%EF%BC%9AWK76518
以下是资料介绍,如需要完整的请充值下载。
1.无需注册登录,支付后按照提示操作即可获取该资料.
2.资料以网页介绍的为准,下载后不会有水印.资料仅供学习参考之用. 帮助
资料介绍

突变结单晶硅太阳电池的初步研究(含任务书,开题报告,外文翻译,毕业论文9100字,答辩PPT)

摘  要
突变结结构的pn结相比于缓变结结构的pn结有利于提高器件的光电转换效率。本课题设计了四种不同结构单晶硅太阳能电池,以分析研究提高太阳电池转换效率的合理器件结构。采用等离子体增强化学气相沉积(PECVD)沉积发射极所需的掺杂硅薄膜,并采用快速热处理(RTP)的方法使得到的薄膜晶化,以获得最优性能的硅薄膜。对于使发射极薄膜性能的优化研究是针对在石英衬底上沉积薄膜,并热处理进行的。,利用上述最优条件制备所设计的四种结构的单晶硅太阳电池。将制作好的四块突变结单晶硅电池片进行IV曲线测试并绘制出每块电池片的IV曲线。通过曲线分析每块电池的开路电压、电流密度、填充因子和电池效率,并把每块电池的分析结果进行对比,得出了ITO/n-μc-Si/p-c-Si/Al结构的P型突变结单晶硅太阳能电池效果最好。在卤钨灯光照条件下,该电池的短路电流密度(J)为11.5mA/cm2,开路电压(VOC)为0.4V,计算得电池效率(η)为3.8%,填充因子(FF)为0.43。

关键字:突变结;快速热处理;IV曲线;电池效率

The pioneering research on the abrupt junction monocrystalline silicon solar cells
Abstract
Abrupt junction structure of the p-n junction compared with graded junction structure of the p-n junction can help improve the photoelectric conversion efficiency of the device. This topic design procession of four different structure of monocrystalline silicon solar cells, analysis and study how to improve solar cell conversion efficiency. By plasma enhanced chemical vapor deposition (PECVD) technique sedimentary emitter of doped silicon thin film, and by using the method of rapid heat treatment (RTP) to make the film crystallization, in order to obtain the optimal performance of the silicon thin film. To optimize emitter film properties of the research is in view of the film deposited on quartz substrate, and the heat treatment. Designed using the optimal conditions for the preparation of the four kinds of structure of monocrystalline silicon solar cells. IV curves of the solar cells were used to characterize the properties. It is found that the properity of the cell with a structure ITO/n-μc-Si/p-c-Si/Al is the best one. The battery short-circuit current (ISC) is 0.0025 A, open circuit voltage (VOC) is 0.4 V, battery efficiency (η) is 1.9%, the fill factor (FF) is 0.43.

Keywords: abrupt junction, rapid thermal process, IV curve, efficiency
 

突变结单晶硅太阳电池的初步研究


目录
摘要…………………………………………………………………………………….I
Abstract……………………………………………………………………………..II
1  引言……..…………………………………………………………………………1
1.1    目前单晶硅在光伏产业中的发展现状………………………………1
  1.2     研究本课题所用的方法…………………………………………………2
2  实验方法………………………………………………………………………7
2.1     设计实验…………………………………………………………………7
  2.2     本次电池制备所涉及电池结构示意图………………………………7
  2.3    实验步骤…………………………………………………………9
3   实验分析……………………………………………………………………13
3.1     单晶硅太阳能电池基本特性参数……………………………………13
3.2     电池片的IV曲线测试…………………………………………………13
3.3     实验结果分析…………………………………………………………16
4   结论…………………………………………………………………………18
参考文献…………………………………………………………………………19
致谢…………………………………………………………………………20

推荐资料